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HCS245MS
December 1992
Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting
Pinouts
20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C TOP VIEW
DIR A0 A1 A2 A3 A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 20 VCC 19 OE 18 B0 17 B1 16 B2 15 B3 14 B4 13 B5 12 B6 11 B7
Features
* 3 Micron Radiation Hardened CMOS SOS * Total Dose 200K or 1 Mega-RAD(Si) * Latch-Up Free Under Any Conditions * Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min * Input Current Levels Ii 5A at VOL, VOH
GND 10
Description
The Intersil HCS245MS is a Radiation Hardened Non-Inverting Octal Bidirectional Bus Transceiver, Three-State, intended for two-way asynchronous communication between data busses. The HCS245MS allows data transmission from the A bus to the B bus or from the B bus to the A bus. The logic level at the direction input (DIR) determines the data direction. The output enable input (OE) puts the I/O port in the high-impedance state when high. The HCS245MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS245MS is supplied in a 20 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).
20 PIN CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C TOP VIEW
DIR A0 A1 A2 A3 A4 A5 A6 A7 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC OE B0 B1 B2 B3 B4 B5 B6 B7
Truth Table
CONTROL INPUTS OE L L H DIR L H X OPERATION B Data to A Bus A Data to B Bus Isolation
Functional Diagram
ONE OF 8 TRANSCEIVERS A DATA 9 B DATA 11 (18, 17, 16, 15, 14, 13, 12) TO OTHER 7 BUFFERS (2, 3, 4, 5, 6, 7, 8)
H = High Voltage Level, L = Low Voltage Level, X = Immaterial To prevent excess currents in the High-Z (Isolation) modes, all I/O terminals should be terminated with 10k to 1M resistors.
DIR 1 OUTPUT ENABLE 19
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
2468.1
7-475
Specifications HCS245MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Impedance . . . . . . . . . . . . . . . . ja jc Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W 16oC/W 12oC/W Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W Power Dissipation per Package (PD) For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W For TA = +100oC to +125oC Derate Linearly at 13mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2, 3 1 2, 3 7, 8A, 8B LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 7.2 6.0 7.2 6.0 VCC -0.1 VCC -0.1 MAX 40 750 0.1 0.1 0.5 5.0 1 50 UNITS A A mA mA mA mA V V V V A A A A -
PARAMETERS Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 3.15V, IOL = 50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOL = 50A, VIL = 1.65V
Output Current (Sink) Output Current (Source) Output Voltage Low
IOL
IOH
VOL
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V, IOH = -50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOH = -50A, VIL = 1.65V
Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test NOTE:
IIN
VCC = 5.5V, VIN = VCC or GND, VCC = 4.5V and 5.5V Applied Voltage = 0V or VCC VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)
IOZ
FN
1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
7-476
Specifications HCS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 VCC = 4.5V 9 10, 11 VCC = 4.5V 9 10, 11 LIMITS TEMPERATURE +25oC +125oC, -55oC MIN 2 2 2
o
PARAMETER Propagation Delay Data to Output Enable to Output
SYMBOL TPLH TPHL TPZL TPZH TPLZ TPHZ
(NOTES 1, 2) CONDITIONS VCC = 4.5V
MAX 19 23 26 30 28 33
UNITS ns ns ns ns ns ns
+25oC +125 C, -55 C +25 C +125 C, -55 C
o o o o
2 2 2
Disable to Output
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 CIN VCC = Open, f = 1MHz 1 1 Output Transition Time NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS MIN 6.0 -6.0 MAX 0.75 0.1 1M RAD LIMITS MIN 5.0 -5.0 MAX 3.75 0.1 UNITS mA mA mA V TTHL TTLH VCC = 4.5V 1 1 TEMPERATURE +25oC +125oC, -55oC MIN MAX UNITS pF pF pF pF ns ns
Typical 45 Typical 45 10 10 12 18
+25oC +125oC, -55oC
+25oC +125oC, -55oC
PARAMETERS Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low
SYMBOL ICC IOL IOH VOL
(NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD, IOL = 50A VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD, IOH = -50A VCC = 5.5V, VIN = VCC or GND Applied Voltage = 0V or VCC
TEMPERATURE +25oC +25oC +25oC +25oC
Output Voltage High
VOH
+25oC
VCC -0.1
-
VCC -0.1
-
V
Input Leakage Current Three-State Output Leakage Current
IIN IOZ
+25oC +25oC
-
5 50
-
5 100
A A
7-477
Specifications HCS245MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS MIN MAX 1M RAD LIMITS MIN MAX UNITS -
PARAMETERS Noise Immunity Functional Test Propagation Delay Data to Output Enable to Output Enable to Output NOTES:
SYMBOL FN
(NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD (Note 3) VCC = 4.5V VCC = 4.5V VCC = 4.5V
TEMPERATURE +25oC
TPLH TPHL TPZL TPZH TPLZ TPHZ
+25oC +25oC +25oC
2 2 2
23 30 33
2 2 2
28 36 33
ns ns ns
1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 5
PARAMETER ICC IOL/IOH IOZL/IOZH
DELTA LIMIT 12A -15% of 0 Hour 200nA
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1) METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
7-478
Specifications HCS245MS
TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1) 2-9 1, 10 - 19 20 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 10 1 - 9, 11 - 20 -
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 680 5% for dynamic burn-in. 10 11 - 18 1, 20 2-9 19
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND 10 VCC = 5V 0.5V 1 - 9, 11 - 20
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
AC Timing Diagrams
VIH VS VIL TPLH TPHL VOH INPUT
AC Load Circuit
DUT TEST POINT CL RL
CL = 50pF VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT RL = 500
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 4.50 2.25 0 0 UNITS V V V V V
7-479
HCS245MS Three-State Low Timing Diagrams
VIH VS VIL TPZL TPLZ VOZ VT VOL CL CL = 50pF OUTPUT VW DUT TEST POINT RL INPUT
Three-State Low Load Circuit
VCC
TRI-STATE LOW VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCS 4.50 4.50 2.25 2.25 0.90 0 UNITS V V V V V V
RL = 500
Three-State High Timing Diagrams
VIH VS VIL TPZH TPHZ VOH VT VOZ OUTPUT VW INPUT
Three-State High Load Circuit
DUT TEST POINT
RL
CL = 50pF RL = 500
TRI-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCS 4.50 4.50 2.25 2.25 3.60 0 UNITS V V V V V V
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
File Number 7-480
HCS245MS Die Characteristics
DIE DIMENSIONS: 124 x 110 mils METALLIZATION: Type: AlSi Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA -2.6kA DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCS245MS
NC NC DIR (1) VCC (20) NC NC OE (19)
A0 (2)
(18) B0 A1 (3)
(17) B1
A2 (4) (16) B2
A3 (5) (15) B3
A4 (6)
(14) B4
A5 (7)
(13) B5
(8) A6
(9) A7
(10) GND
(11) B7
(12) B6
7-481

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